inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDV64/a/b/c description collector current -i c = - 12a collector-emitter saturation voltage- : v ce(sat) = -2.0v(max.)@ i c = -5a complement to type bdv65/a/b/c applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BDV64 -60 BDV64a -80 BDV64b -100 v cbo collector-base voltage BDV64c -120 v BDV64 -60 BDV64a -80 BDV64b -100 v ceo collector-emitter voltage BDV64c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i cm collector current-peak -15 a i b b base current-continuous -0.5 a collector power dissipation @ t c =25 125 p c collector power dissipation @ t a =25 3.5 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 35.7 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDV64/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDV64 -60 BDV64a -80 BDV64b -100 v (br)ceo collector-emitter breakdown voltage BDV64c i c = -30ma; i b = 0 -120 v v ce( sat ) collector-emitter saturation voltage i c = -5a; i b = -20ma b -2.0 v v be( on ) base-emitter on voltage i c = -5a; v ce = -4v -2.5 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 -2.0 ma BDV64 v cb = -40v; i e = 0;t j = 150 BDV64a v cb = -50v; i e = 0;t j = 150 BDV64b v cb = -60v; i e = 0;t j = 150 i cbo collector cutoff current BDV64c v cb = -70v; i e = 0;t j = 150 -2.0 ma i cbo collector cutoff current v cb = v cbomax ; i e = 0 -0.4 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -5 ma h fe dc current gain i c = -5a; v ce = -4v 1000 isc website www.iscsemi.cn 2
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